PART |
Description |
Maker |
RA30H1317M111 RA30H1317M1-201 |
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
RD06HVF111 |
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
|
RD12MVS1 |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RD02MUS2 |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RD02MUS111 |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
|
RD07MVS210 |
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
RA13H1317M RA13H1317M-E01 RA13H1317M-01 |
135-175MHz 13W 12.5V MOBILE RADIO 135 - 175MHz3W 12.5V移动通信
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RA07M1317M10 |
135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
RA30H1317M1 RA30H1317M1-101 |
RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
RQL |
rohs compliance
|
Surge Components
|